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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGA2031/1 MMIC variable gain amplifier
Product specification Supersedes data of 2000 Mar 02 2001 Feb 05
Philips Semiconductors
Product specification
MMIC variable gain amplifier
FEATURES * High gain * Excellent adjacent channel power rejection * Small SMD package * Low dissipation. APPLICATIONS * General purpose variable gain amplifier for low voltage and medium power * Driver for power amplifiers in systems that require good linearity, such as CDMA, both cellular band (850 MHz) and PCS (1.9 GHz). This is because of the high output power and good linearity. DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 6-pin SOT363 SMD plastic package for low voltage medium power applications.
CTRL 1 2 3 Top view Marking code: A3- BIAS CIRCUIT
BGA2031/1
PINNING PIN 1 2 3 4 5 6 RFin CTRL VS1 VS2 + RFout GND GND DESCRIPTION
handbook, halfpage
6
5
4 RFin
VS1 VS2+RFout GND
MAM440
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA SYMBOL VS1 VS2 IS PARAMETER supply voltage supply voltage supply current; pins 3 and 4 VCTRL = 0 VCTRL = 2.7 V; VS = 3 V VCTRL = 2.4 V; VS = 3 V PL ACPR Gp G load power adjacent channel power rejection power gain gain control range at 1 dB gain compression point; f = 1.9 GHz f = 1.9 GHz; PL = 10 dBm f = 836 MHz; PL = 8 dBm f = 1.9 GHz; PL = 12 dBm f = 836 MHz; PL = 8 dBm f = 836 MHz; PL = 8 dBm CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. CONDITIONS 3 3 0 51 30 13 49 48 23 24 62 TYP. MAX. 3.3 3.3 10 63 37 - - - - - - UNIT V V A mA mA dBm dBc dBc dB dB dB
2001 Feb 05
2
Philips Semiconductors
Product specification
MMIC variable gain amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL VS VCTRL ICTRL IS1 IS2 PD Ptot Tstg Tj PARAMETER DC supply voltage control voltage control current supply current; pin 3 supply current; pin 4 drive power total power dissipation storage temperature operating junction temperature Ts 80 C CONDITIONS - - - - - - - -65 - MIN.
BGA2031/1
MAX. 3.3 < VS 1.2 27 50 +10 200 +150 150 V V
UNIT
mA mA mA dBm mW C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point VALUE 350 UNIT K/W
handbook, halfpage
300
MLD490
Ptot (mW) 200
100
0 0 50 100 150 Ts (C) 200
Fig.2 Power derating.
2001 Feb 05
3
Philips Semiconductors
Product specification
MMIC variable gain amplifier
CHARACTERISTICS Tj = 25 C; ZS = ZL = 50 ; VS = 3 V; unless otherwise specified. SYMBOL f VS1 VS2 IS PARAMETER frequency range supply voltage supply voltage supply current; pins 3 and 4 VCTRL = 0; PD = 0 mW VCTRL = 2.7 V; VS = 3 V; PD = 0 mW VCTRL = 2.4 V; VS = 3 V; PD = 0 mW ICTRL f = 1900 MHz f Gp G GCS ACPR frequency range power gain gain control range gain control slope VCTRL = 2.7 V; PL = 12 dBm 0 < VCTRL < 2.7 V note 1 1850 - - - - - - - - 824 VCTRL = 2.7 V; PL = 8 dBm 0 < VCTRL < 2.7 V note 1 - - - - - - - - - 23 56 21 49 74 13 1:3.5 1:1.3 - 24 62 22 49 74 11 1:2 1:1.4 control current VCTRL = 2.7 V CONDITIONS MIN. 800 2.7 2.7 - 37 23 0.7 - 3 3 0 51 30 0.92 TYP.
BGA2031/1
MAX. 2500 3.3 3.3 10 63 37 1.1
UNIT MHz V V A mA mA mA
1950 - - - - - - - - 849 - - - - - - - -
MHz dB dB dB/V dBc dBc dBm
adjacent channel power 1.23 MHz offset; BWACP = 30 kHz; rejection BWcarrier = 1.23 MHz; PL = 10 dBm 1.98 MHz offset; BWACP = 30 kHz; BWcarrier = 1.23 MHz; PL = 10 dBm
PL VSWRIN VSWROUT f = 836 MHz f Gp G GCS ACPR
load power input VSWR output VSWR
at 1 dB gain compression point VCTRL = 2.7 V VCTRL = 2.7 V
frequency range power gain gain control range gain control slope
MHz dB dB dB/V dBc dBc dBm
adjacent channel power 885 kHz offset; BWACP = 30 kHz; BWcarrier = 1.23 MHz; PL = 8 dBm rejection 1.98 MHz offset; BWACP = 30 kHz; BWcarrier = 1.23 MHz; PL = 8 dBm
PL VSWRIN VSWROUT Note
load power input VSWR output VSWR
at 1 dB gain compression point VCTRL = 2.7 V VCTRL = 2.7 V
1. GCS = (G at VCTRL = 2.5 V - G at VCTRL = 1.5 V) / (VCTRL = 2.5 V - VCTRL = 1.5V)
2001 Feb 05
4
Philips Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
handbook, halfpage
60
MLD491
handbook, halfpage
16
MLD492
IS (mA) 40
PL (dBm) 8 836 MHz
20
0
1900 MHz
0 0 1 2 VCTRL (V) 3
-8 -30
-26
-22
-18
-14 -10 PD (dBm)
VS = 3 V.
VS = 3 V; VCTRL = 2.7 V.
Fig.3
Total supply current as a function of control voltage; typical values.
Fig.4
Load power as a function of drive power; typical values.
handbook, halfpage
40
MLD493
handbook, halfpage
Gp (dB) 20
40 Gp (dB) 20
MLD494
0 0 -20 -20
-40
-40
-60 0 1 2 VCTRL (V) 3
0
1
2
VCTRL (V)
3
VS = 3 V; PD = -14 dBm; f = 1.9 GHz.
VS = 3 V; PD = -14 dBm; f = 836 MHz.
Fig.5
Power gain as a function of control voltage; typical values.
Fig.6
Power gain as a function of control voltage; typical values.
2001 Feb 05
5
Philips Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
handbook, halfpage
0
MLD495
handbook, halfpage
0
MLD496
ACPR (dBc) -20
ACPR (dBc) -20
offset = 1.23 MHz -40 -40
offset = 0.885 MHz
offset = 1.98 MHz -60 -60
offset = 1.98 MHz
-80 -20
-10
0
PL (dBm)
10
-80 -20
-10
0
PL (dBm)
10
VS = 3 V; f = 1.9 GHz; PD = -12.8 dBm.
VS = 3.6 V; f = 836 MHz; PD = -16 dBm.
Fig.7
Adjacent channel power rejection as a function of load power; typical values.
Fig.8
Adjacent channel power rejection as a function of load power; typical values.
handbook, halfpage
160 GCS
MLD497
(dB/V) 120
80
40 836 MHz 0 1900 MHz
-40
0
1
2
VCTRL (V)
3
VS = 3 V; PD = -14 dBm.
Fig.9
Gain control slope as a function of control voltage; typical values.
2001 Feb 05
6
Philips Semiconductors
Product specification
MMIC variable gain amplifier
ELECTRICAL BLOCK DIAGRAM
BGA2031/1
handbook, full pagewidth
R2 VS1 C2 C3
VS2
RF input DC-block
L1
L2 Bias-T
RF output
R1 VCTRL C1
BIAS CIRCUIT
MGU298
Fig.10 Test diagram.
List of components (see Fig.10) COMPONENT C1 C2 C3 L1, L2 R1 R2 Note 1. The striplines are on a gold plated double copper-clad printed-circuit board (r = 6.15), board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m. DESCRIPTION multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor stripline; note 1 SMD resistor SMD resistor 10 nF 22 nF 1.5 nF 50 22 ; 0.16 W 2.4 ; 0.16 W 0603 0603 VALUE DIMENSIONS 0603 0603 0603
2001 Feb 05
7
Philips Semiconductors
Product specification
MMIC variable gain amplifier
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
BGA2031/1
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2001 Feb 05
8
Philips Semiconductors
Product specification
MMIC variable gain amplifier
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
BGA2031/1
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Feb 05
9
Philips Semiconductors
Product specification
MMIC variable gain amplifier
NOTES
BGA2031/1
2001 Feb 05
10
Philips Semiconductors
Product specification
MMIC variable gain amplifier
NOTES
BGA2031/1
2001 Feb 05
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2001
Internet: http://www.semiconductors.philips.com
SCA 71
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/02/pp12
Date of release: 2001
Feb 05
Document order number:
9397 750 06987

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